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Materials Science in Semiconductor Processing

Subject Areas: Mechanical Engineering
ISSN: 1369-8001
SJR: 68

Open Access

Journal Article

Effect of high temperature annealing (T > 1650{\deg}C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Spera, Monia; Corso, Domenico; Di Franco, Salvatore; Greco, Giuseppe; Severino, Andrea; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio

2020 Physics

doi:10.1016/j.mssp.2019.01.019

Abstract: This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about...
Open Access

Journal Article

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Spera, Monia; Greco, Giuseppe; Nigro, Raffaella Lo; Bongiorno, Corrado; Giannazzo, Filippo; Zielinski, Marcin; La Via, Francesco; Roccaforte, Fabrizio

2020 Physics

doi:10.1016/j.mssp.2019.01.015

Abstract: This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several...

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