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Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere

Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 108 cm-2 was realized in 3 min by near-surface glow discharge. The as-grown films were characterized by scanning electron microscopy(SEM), x-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Acta Physica Sinica (Overseas Edition) IOP Publishing

Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere

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Copyright
Copyright © IOP Publishing Ltd
ISSN
1004-423X
DOI
10.1088/1004-423X/8/12/009
Publisher site
See Article on Publisher Site

Abstract

Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 108 cm-2 was realized in 3 min by near-surface glow discharge. The as-grown films were characterized by scanning electron microscopy(SEM), x-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.

Journal

Acta Physica Sinica (Overseas Edition)IOP Publishing

Published: Dec 1, 1999

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