Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere
Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere
Jin, Wu; Fang-qing, Xie; Qing-zhe, Zhang; Ji-wen, Liu; You-cun, Chen; Zhang-da, Lin
1999-12-01 00:00:00
Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 108 cm-2 was realized in 3 min by near-surface glow discharge. The as-grown films were characterized by scanning electron microscopy(SEM), x-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.
http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.pngActa Physica Sinica (Overseas Edition)IOP Publishinghttp://www.deepdyve.com/lp/iop-publishing/growth-model-of-textured-diamond-111-film-in-ch4-o2-h2-atmosphere-K8CfKpO0mg
Growth model of textured diamond (111) film in CH4/O2/H2 atmosphere
Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 108 cm-2 was realized in 3 min by near-surface glow discharge. The as-grown films were characterized by scanning electron microscopy(SEM), x-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.
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