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EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM

EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM Abstract A new concept for materials processing in space with the expectation of future manufacturing in that environment exploits the ultra-vacuum component of space for thin-film epitaxial growth. The unique low earth orbit space environment is expected to yield vacuum levels of 10-14 torr or better, semi-infinite pumping speed and large ultra-vacuum volume (10's to 100's of cubic meters) without walls. These space ultra-vacuum characteristics promise major improvement in the quality, throughput, and new materials and devices possibilities of epitaxially grown thin films, especially in the area of semiconductors for microelectronics use. For such improved crystalline thin-film materials there is expected a very large value added from space ultra-vacuum processing, and as a result the application of the epitaxial thin-film growth technology to space could lead to major commercial efforts in space. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Materials and Manufacturing Processes Taylor & Francis

EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM

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EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM

Abstract

Abstract A new concept for materials processing in space with the expectation of future manufacturing in that environment exploits the ultra-vacuum component of space for thin-film epitaxial growth. The unique low earth orbit space environment is expected to yield vacuum levels of 10-14 torr or better, semi-infinite pumping speed and large ultra-vacuum volume (10's to 100's of cubic meters) without walls. These space ultra-vacuum characteristics promise major improvement in the...
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Publisher
Taylor & Francis
Copyright
Copyright Taylor & Francis Group, LLC
ISSN
0898-2090
DOI
10.1080/10426918808953220
Publisher site
See Article on Publisher Site

Abstract

Abstract A new concept for materials processing in space with the expectation of future manufacturing in that environment exploits the ultra-vacuum component of space for thin-film epitaxial growth. The unique low earth orbit space environment is expected to yield vacuum levels of 10-14 torr or better, semi-infinite pumping speed and large ultra-vacuum volume (10's to 100's of cubic meters) without walls. These space ultra-vacuum characteristics promise major improvement in the quality, throughput, and new materials and devices possibilities of epitaxially grown thin films, especially in the area of semiconductors for microelectronics use. For such improved crystalline thin-film materials there is expected a very large value added from space ultra-vacuum processing, and as a result the application of the epitaxial thin-film growth technology to space could lead to major commercial efforts in space.

Journal

Advanced Materials and Manufacturing Processes – Taylor & Francis

Published: Jan 1, 1988

References

  • Microgravitv Science and Application Program Description Documents
  • Scientific Foundation of Space Manufacturing